 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD2030 160 160 5 100 400 150 -55 to +150 2SD2031 200 200 5 100 400 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol 2SD2030 V(BR)CBO 2SD2031 Collector to emitter breakdown voltage 2SD2030 V(BR)CEO 2SD2031 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO Min 160 200 160 200 5 -- -- -- -- 10 V A I E = 10 A, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade hFE1 B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ -- Max -- Unit V Test conditions I C = 10 A, IE = 0 -- -- V I C = 1 mA, RBE = 2SD2030 I CBO 2SD2031 DC current transfer ratio 60 30 -- -- -- -- -- -- -- -- 140 3.8 200 -- 1.5 0.5 -- -- V V MHz pF VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD2030 and 2SD2031 are grouped by h FE1 as follows. 2 2SD2030, 2SD2031 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 Collector Current IC (mA) Typical Output Characteristics 20 16 400 12 8 200 4 120 110 100 90 80 70 60 50 40 30 20 10 A IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 100 Collector Current IC (mA) 50 DC Current Transfer Ratio hFE VCE = 5 V Pulse Test 500 200 DC Current Transfer Ratio vs. Collector Current VCE = 5 V Pulse Test Ta = 75C 100 -25 50 20 10 5 25 5C 20 10 5 25 2 1 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 Ta = 7 -25 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SD2030, 2SD2031 Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) 5 Gain Bandwidth Product fT (MHz) lC = 10 lB Pulse Test 2 1.0 0.5 VBE (sat) 500 VCE = 5 V Pulse Test Gain Bandwidth Product vs. Collector Current 200 100 50 Ta = -25C 75 25 0.2 0.1 0.05 1 VCE (sat) 75 25 Ta 20 10 5 0.5 5C = -2 2 5 10 20 50 Collector Current IC (mA) 100 1.0 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 50 20 10 5 f = 1 MHz IE = 0 2 1.0 0.5 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 4 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of 2SD2030
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |